AO6401
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
-10V
20
-4.5V
-3V
-I
D
(A)
15
-I
D
(A)
-2.5V
10
V
GS
=-2V
6
125°C
4
25°C
5
2
10
V
DS
=-5V
8
0
0
1
2
3
4
-V
DS
(Volts)
Fig 1: On-Region Characteristics
5
0
0
0.5
1.5
2
2.5
-V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
=-5A
V
GS
=-4.5V
V
GS
=-10V
1
3
120
100
R
DS(ON)
(m
Ω
)
80
60
40
20
0
2
4
6
8
10
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
190
170
150
130
R
DS(ON)
(m
Ω
)
110
90
70
50
30
10
0
2
4
6
8
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
25°C
125°C
I
D
=-2A
V
GS
=-2.5V
1.6
Normalized On-Resistance
1.4
1.2
V
GS
=-4.5V
V
GS
=-2.5V
I
D
=-2A
1
V
GS
=-10V
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+01
1.0E+00
1.0E-01
-I
S
(A)
1.0E-02
1.0E-03
25°C
1.0E-04
1.0E-05
1.0E-06
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
125°C
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
