欢迎访问ic37.com |
会员登录 免费注册
发布采购

AO5600EL 参数 Datasheet PDF下载

AO5600EL图片预览
型号: AO5600EL
PDF下载: 下载PDF文件 查看货源
内容描述: 互补增强型场效应晶体管 [Complementary Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 9 页 / 944 K
品牌: AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
 浏览型号AO5600EL的Datasheet PDF文件第1页浏览型号AO5600EL的Datasheet PDF文件第2页浏览型号AO5600EL的Datasheet PDF文件第3页浏览型号AO5600EL的Datasheet PDF文件第4页浏览型号AO5600EL的Datasheet PDF文件第5页浏览型号AO5600EL的Datasheet PDF文件第7页浏览型号AO5600EL的Datasheet PDF文件第8页浏览型号AO5600EL的Datasheet PDF文件第9页  
AO5600E
P-Channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
-6V
4
-3.5V
-I
D
(A)
-4.5V
-4V
2
-10V
3
V
DS
=-5V
25°C
-I
D
(A)
3
2
-3V
-2.5V
125°C
1
1
V
GS
=-2.0V
0
0
1
2
3
4
5
-V
DS
(Volts)
Figure 1: On-Region Characteristics
1.4
1.2
R
DS(ON)
(
)
V
GS
=-1.8V
1
0.8
0.6
0.4
0
0.2
0.4
0.6
0.8
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Normalized On-Resistance
1.6
0
0
1
2
3
4
5
-V
GS
(Volts)
Figure 2: Transfer Characteristics
1.4
V
GS
=-1.8V
1.2
V
GS
=-2.5V
V
GS
=-4.5V
1
V
GS
=-2.5V
V
GS
=-4.5V
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.3
I
D
=-0.5A
1.1
125°C
-I
S
(A)
1.0E+00
1.0E-01
125°C
1.0E-02
25°C
1.0E-03
1.0E-04
1.0E-05
1.0E-06
0
2
4
6
8
10
0.0
0.4
0.8
1.2
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
R
DS(ON)
(
)
0.9
0.7
25°C
0.5
0.3
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com