AO5401E
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO5401E/L uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications.AO5401E and AO5401EL are electrically
identical.
-RoHS compliant
-AO5401EL is Halogen Free
SC89-3L
Top View
D
Features
V
DS
(V) = -20V
I
D
= -0.5 A (V
GS
= -4.5V)
R
DS(ON)
< 0.8Ω (V
GS
= -4.5V)
R
DS(ON)
< 1Ω (V
GS
= -2.5V)
R
DS(ON)
< 1.3Ω (V
GS
= -1.8V)
ESD PROTECTED!
D
G
S
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
10 Sec
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
AF
Pulsed Drain Current
Power Dissipation
A
B
Steady State
-20
±8
-0.5
-0.40
-1
0.28
0.18
-55 to 150
Units
V
V
A
V
GS
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
0.38
0.24
-0.5
-0.45
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
A
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
275
360
300
Max
330
450
350
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
