AO4944
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
V
GS
(Volts)
6
4
2
0
0
5
10
15
20
25
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
2500
2000
Capacitance (pF)
1500
1000
500
0
0
15
20
25
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
10
30
C
rss
C
oss
V
DS
=15V
I
D
=8.6A
C
iss
DYNAMIC PARAMETERS
1000.0
100.0
I
D
(Amps)
Power (W)
10.0
1.0
0.1
0.0
0.01
T
J(Max)
=150°C
T
C
=25°C
DC
R
DS(ON)
limited
10µs
100µs
1m
10ms
0.1s
1s
10s
10
100
50
40
30
20
10
0
0.0001
T
J(Max)
=150°C
T
C
=25°C
0.1
1
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
0.001
0.1
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=62.5°C/W
0.01
0.1
1
P
D
T
on
T
100
1000
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
