AO4932
FET1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
35
10V
30
25
I
D
(A)
20
15
10
5
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
14
Normalized On-Resistance
V
GS
=4.5V
12
R
DS(ON)
(mΩ)
Ω
1.8
1.6
1.4
1.2
1
0.8
5
20
25
30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
10
15
0
75
100
125
150
175
Temperature (°
C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
25
50
V
GS
=10V
I
D
=11A
V
GS
=2.25V
2.5V
4.5V
3V
30
2.75V
I
D
(A)
25
20
15
10
5
0
1.5
1.8
2.1
2.4
2.7
3
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
125°C
25°C
35
V
DS
=5V
17
V
GS
=4.5V
5
I
D
=9A
10
V
GS
=10V
8
2
10
6
25
I
D
=11A
20
R
DS(ON)
(mΩ)
Ω
125°C
15
I
S
(A)
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
25°C
1.0E-04
1.0E-05
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
2
4
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.0
0.2
125°C
25°C
40
10
5
Rev 4: Nov. 2011
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AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
