AO4926
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
SRFET
TM
Features
FET1
FET2
V
DS
(V) = 30V
V
DS
(V) = 30V
I
D
=7.3A (V
GS
= 10V)
I
D
= 9.5A
R
DS(ON)
< 13.5mΩ <24mΩ
(V
GS
= 10V)
<29mΩ
(V
GS
= 4.5V)
R
DS(ON)
< 16mΩ
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
General Description
The AO4926 uses advanced trench technology to provide
excellent R
DS(ON)
and low gate charge. The two
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in DC-DC
converters. A monolithically integrated Schottky diode in
parallel with the synchronous MOSFET to boost efficiency
further.
Standard Product AO4926 is Pb-free (meets
ROHS & Sony 259 specifications).
SOIC-8
SRFET
TM
Soft Recovery
MOSFET:
Integrated Schottky Diode
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
Max FET1 Max FET2
V
DS
Drain-Source Voltage
30
30
V
GS
Gate-Source Voltage
±12
±12
Continuous Drain
9.5
7.3
T
A
=25°C
AF
Current
T
A
=70°C
7.8
5.9
I
DSM
Pulsed Drain Current
Avalanche Current
B
B
B
Units
V
V
A
A
A
mJ
W
°C
I
DM
I
AR
E
AR
P
DSM
T
J
, T
STG
T
A
=25°C
40
22
73
2.0
1.3
40
12
22
2.0
1.3
Repetitive avalanche energy L=0.3mH
Power Dissipation
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics FET1
Parameter
A
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Thermal Characteristics FET2
Parameter
A
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
A
C
Maximum Junction-to-Lead
-55 to 150 -55 to 150
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
48
74
32
Max
62.5
90
40
Units
°C/W
°C/W
°C/W
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
48
74
32
Max
62.5
90
40
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
