AO4924 参数 Datasheet PDF下载

AO4924

FET2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

60

50

40

I

D

(A)

30

2.5V

20

10

0

0

1

2

3

4

5

V

DS

(Volts)

Fig 1: On-Region Characteristics

30

Normalized On-Resistance

1.8

I

D

=6A

V

GS

=4.5V

V

GS

=2V

10V

4.5V

3V

I

D

(A)

16

12

125°C

8

25°C

4

0

0

0.5

1

1.5

2

2.5

3

V

GS

(Volts)

Figure 2: Transfer Characteristics

V

DS

=5V

20

1.5

R

DS(ON)

(m

Ω

)

25

V

GS

=4.5V

1.2

20

V

GS

=10V

I

D

=7.3A

V

GS

=10V

0.9

15

0

5

10

15

20

I

D

(A)

Figure 3: On-Resistance vs. Drain Current and

Gate Voltage

0.6

-50

-25

0

25

50

75

100 125 150 175

Temperature (°C)

Figure 4: On-Resistance vs. Junction

Temperature

60

55

50

45

R

DS(ON)

(m

Ω

)

35

125°C

I

S

(A)

40

I

D

=7.3A

1.0E+01

1.0E+00

1.0E-01

1.0E-02

125°C

1.0E-03

30

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

25°C

25

1.0E-04

20

1.0E-05

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

25°C

15

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

1.0E-06

10

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0

2

4

6

8

10

V

GS

(Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage

V

SD

(Volts)

Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd.