AO4924
Asymmetric Dual N-Channel MOSFET
SRFET
General Description
The AO4924 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in DC-
DC converters. A monolithically integrated Schottky
diode in parallel with the synchronous MOSFET to
boost efficiency further.
TM
Product Summary
FET1
V
DS
(V) = 30V
I
D
= 9A
R
DS(ON)
< 15.8mΩ
R
DS(ON)
< 19.5mΩ
FET2
V
DS
(V) = 30V
I
D
=7.3A
(V
GS
= 10V)
<24mΩ
(V
GS
= 10V)
<29mΩ
(V
GS
= 4.5V)
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
Bottom View
Top View
S1
G1
S2
G2
Pin1
1
2
3
4
8
7
6
5
D1
D1
D2
D2
SRFET
TM
Soft Recovery
MOSFET:
Integrated Schottky Diode
D1
D2
G1
S1
G2
S2
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Max FET1
Drain-Source Voltage
V
DS
30
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
Avalanche Current
B
B
Max FET2
30
±12
7.3
5.9
40
12
22
2.0
1.3
-55 to 150
Units
V
V
A
V
GS
T
A
=25°
C
T
A
=70°
C
I
DSM
I
DM
I
AR
E
AR
P
DSM
T
J
, T
STG
±12
9.0
7.2
40
16
38
2.0
1.3
-55 to 150
A
mJ
W
°
C
Repetitive avalanche energy L=0.3mH
T
A
=25°
C
Power Dissipation
T
A
=70°
C
Junction and Storage Temperature Range
Thermal Characteristics FET1
Parameter
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
Thermal Characteristics FET2
Parameter
A
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
48
74
32
Max
62.5
90
40
Units
°
C/W
°
C/W
°
C/W
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
48
74
32
Max
62.5
90
40
Units
°
C/W
°
C/W
°
C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
