AO4922
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
SRFET
TM
Features
FET1
V
DS
(V) = 30V
I
D
= 9A
R
DS(ON)
< 15.8mΩ
R
DS(ON)
< 18.5mΩ
General Description
The AO4922 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in DC-
DC converters. A monolithically integrated Schottky
diode in parallel with the synchronous MOSFET to
boost efficiency further.
Standard Product AO4922 is
Pb-free (meets ROHS & Sony 259 specifications).
AO4922L is a Green Product ordering option.
AO4922L and AO4922 are electrically identical.
SOIC-8
FET2
V
DS
(V) = 30V
I
D
=7.3A
(V
GS
= 10V)
<24mΩ
(V
GS
= 10V)
<29mΩ
(V
GS
= 4.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
SRFET
TM
Soft Recovery
MOSFET:
Integrated Schottky Diode
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
Max FET1 Max FET2
V
DS
30
30
Drain-Source Voltage
V
GS
Gate-Source Voltage
±12
±12
Continuous Drain
9.0
7.3
T
A
=25°C
A
Current
7.2
5.9
T
A
=70°C
I
DSM
Pulsed Drain Current
Avalanche Current
B
B
B
Units
V
V
A
I
DM
I
AR
E
AR
P
DSM
T
J
, T
STG
T
A
=25°C
40
22
73
2.0
1.3
40
12
22
2.0
1.3
A
mJ
W
°C
Repetitive avalanche energy L=0.3mH
Power Dissipation
A
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics FET1
Parameter
A
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
A
C
Maximum Junction-to-Lead
Thermal Characteristics FET2
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
-55 to 150 -55 to 150
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
48
74
32
Max
62.5
90
40
Units
°C/W
°C/W
°C/W
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
48
74
32
Max
62.5
90
40
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
