AO4922
FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
10V
4.5V
60
I
D
(A)
I
D
(A)
15
10
5
0
0
1
2
3
4
5
1
1.5
2
2.5
3
3.5
4
V
DS
(Volts)
V
GS
(Volts)
Figure 2: Transfer Characteristics
2
Normalized On-Resistance
1.8
1.6
1.4
1.2
1
0.8
0
5
10
15
20
25
30
0
30
60
90
120
150
180
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
V
GS
=4.5V
I
D
=7A
I
D
=9A
V
GS
=10V
6V
30
25
20
V
DS
=5V
80
40
V
GS
=3.5V
20
125°
25°C
0
DYNAMIC PARAMETERS
Figure 1: On-Region Characteristics
18
16
R
DS(ON)
(m
Ω
)
V
GS
=4.5V
14
12
V
GS
=10V
10
35
I
D
=9A
1.0E+02
1.0E+01
1.0E+00
125°C
30
R
DS(ON)
(m
Ω
)
I
S
(A)
25
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
25°C
20
25°C
15
10
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.