AO4918
Q2 Electrical Characteristics (T
J
=25°C unless otherwise noted)
30
25
20
I
D
(A)
15
10
5
0
0
1
4V
10V
4.5V
3.5V
I
D
(A)
30
25
20
125°C
15
10
5
0
2
3
4
5
1
1.5
2
2.5
3
3.5
4
25°C
V
DS
=5V
V
GS
=3V
V
DS
(Volts)
Fig 1: On-Region Characteristics
V
GS
(Volts)
1040
Figure 2: Transfer Characteristics
26
Normalized On-Resistance
V
GS
=4.5V
22
R
DS(ON)
(m
Ω
)
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
0.9
0
50
I
D
=8.3A
180
110
0.7
V
GS
=4.5V
V
GS
=10V
18
V
GS
=10V
14
10
0
5
10
15
20
25
30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
100
150
200
Temperature (°C)
Figure 4: On resistance vs. Junction Temperature
60
50
R
DS(ON)
(m
Ω
)
40
30
125°C
20
25°C
10
2
4
6
8
10
V
GS
(Volts)
Figure 5: On resistance vs. Gate-Source Voltage
I
D
=8.3A
1.0E+01
1.0E+00
1.0E-01
I
S
(A)
1.0E-02
25°C
1.0E-03
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
125°C
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
