AO4914A
Q1 Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
Zero Gate Voltage Drain Current.
(Set by Schottky leakage)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=6A
Forward Transconductance
V
DS
=5V, I
D
=8.5A
Diode+Schottky Forward Voltage
I
S
=1A
Maximum Body-Diode+Schottky Continuous Current
Conditions
I
D
=250µA, V
GS
=0V
V
R
=30V
V
R
=30V, T
J
=125°C
V
R
=30V, T
J
=150°C
V
DS
=0V, V
GS
= ±20V
V
DS
=V
GS
I
D
=250µA
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=8.5A
T
J
=125°C
1
30
14.8
20.5
20.6
23
0.46
0.6
3.5
955
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
175
112
0.5
17
V
GS
=10V, V
DS
=15V, I
D
=8.5A
9
3.4
4.7
5
V
GS
=10V, V
DS
=15V, R
L
=1.8Ω,
R
GEN
=3Ω
I
F
=8.5A, dI/dt=100A/µs
I
F
=8.5A, dI/dt=100A/µs
6
19
4.5
20
9.5
6.5
7.5
25
6
24
12
0.85
23
11.2
1250
18
25
28
1.7
Min
30
0.005 0.05
3.2
12
10
20
100
3
mA
nA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Typ
Max Units
V
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance (FET + Schottky)
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge
Q
g
(4.5V) Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode + Schottky Reverse Recovery Time
Body Diode + Schottky Reverse Recovery Charge
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value in any
given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
µs
pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA curve
provides a single pulse rating.
F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance
and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately.
Rev 0 : Aug 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
