AO4826
60V Dual N-Channel MOSFET
General Description
The AO4826 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
Product Summary
V
DS
(V) = 60V
I
D
= 6.3A (V
GS
= 10V)
R
DS(ON)
< 25mΩ (V
GS
= 10V)
R
DS(ON)
< 30mΩ (V
GS
= 4.5V)
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
Bottom View
Top View
S2
G2
S1
G1
Pin1
D2
D2
D1
D1
D1
D2
G1
S1
G2
S2
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
V
DS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
B
Maximum
60
±20
6.3
5
40
2
1.28
-55 to 150
Units
V
V
A
V
GS
T
A
=25°
C
T
A
=70°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
P
D
T
J
, T
STG
W
°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
50
73
31
Max
62.5
110
40
Units
°
C/W
°
C/W
°
C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com