AO4824L
30V Dual N-Channel MOSFET
General Description
The AO4824L uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The two
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in DC-DC
converters.
Features
Q1
V
DS
(V) = 30V
I
D
= 8.5A
R
DS(ON)
< 17mΩ
R
DS(ON)
< 27mΩ
Q2
V
DS
(V) = 30V
I
D
=9.8A
(V
GS
= 10V)
<13mΩ
(V
GS
= 10V)
<15mΩ
(V
GS
= 4.5V)
SOIC-8
Top View
Bottom View
Top View
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
D1
D2
G1
S1
G2
S2
Pin1
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
Max Q1
30
±20
8.5
6.8
30
2
1.28
-55 to 150
Typ
48
74
35
Max Q2
30
±12
9.8
7.8
40
2
1.28
-55 to 150
Max
62.5
110
40
Units
V
V
A
V
GS
T
A
=25°
C
T
A
=70°
C
T
A
=25°
C
I
D
I
DM
P
D
T
J
, T
STG
Symbol
R
θJA
R
θJL
Symbol
R
θJA
R
θJL
C
T
A
=70°
Power Dissipation
Junction and Storage Temperature Range
Parameter: Thermal Characteristics MOSFET Q1
t
≤
10s
Maximum Junction-to-Ambient
A
A
Steady-State
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
W
°
C
Units
°
C/W
Steady-State
Parameter: Thermal Characteristics MOSFET Q2
t
≤
10s
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
Typ
48
74
35
Max
62.5
110
40
Units
°
C/W
Steady-State
Steady-State
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
