AO4817
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
-10V
-6V
20
-I
D
(A)
15
-4.5V
10
V
GS
=-4V
0
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
20
19
R
DS(ON)
(m
Ω
)
18
17
16
15
14
0
5
10
15
20
25
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.0E+01
I
D
=-8A
1.0E+00
1.0E-01
-I
S
(A)
125°C
V
GS
=-20V
Normalized On-Resistance
V
GS
=-10V
1.6
V
GS
=-20V
ID=-8A
V
GS
=-10V
ID=-8A
5
0
2
2.5
3
3.5
4
4.5
5
-V
GS
(Volts)
Figure 2: Transfer Characteristics
25°C
-I
D
(A)
10
125°C
25
-5V
20
V
DS
=-5V
1.4
1.2
1
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
60
50
R
DS(ON)
(m
Ω
)
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
40
1.0E-02
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
1.0E-03
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
30
FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 125°C
1.0E-04
25°C
20
1.0E-05
25°C
10
0
5
10
15
20
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-06
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
