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AO4818L 参数 Datasheet PDF下载

AO4818L图片预览
型号: AO4818L
PDF下载: 下载PDF文件 查看货源
内容描述: 双N沟道增强型场效应晶体管 [Dual N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 4 页 / 203 K
品牌: AOS [ ALPHA & OMEGA SEMICONDUCTORS ]
 浏览型号AO4818L的Datasheet PDF文件第1页浏览型号AO4818L的Datasheet PDF文件第3页浏览型号AO4818L的Datasheet PDF文件第4页  
AO4818  
Electrical Characteristics (TJ=25°C unless otherwise noted)  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max Units  
STATIC PARAMETERS  
BVDSS  
Drain-Source Breakdown Voltage  
ID=250µA, VGS=0V  
30  
V
VDS=24V, VGS=0V  
1
5
IDSS  
Zero Gate Voltage Drain Current  
µA  
TJ=55°C  
IGSS  
VGS(th)  
ID(ON)  
Gate-Body leakage current  
Gate Threshold Voltage  
On state drain current  
VDS=0V, VGS= ±20V  
100  
3
nA  
V
A
VDS=VGS ID=250µA  
VGS=10V, VDS=5V  
VGS=10V, ID=8.5A  
1
40  
1.8  
15.5  
22.3  
23  
23  
0.75  
19  
27  
28  
mΩ  
RDS(ON)  
TJ=125°C  
Static Drain-Source On-Resistance  
mΩ  
S
V
V
V
GS=4.5V, ID=6A  
DS=5V, ID=8.5A  
gFS  
VSD  
IS  
Forward Transconductance  
Diode Forward Voltage  
Maximum Body-Diode Continuous Current  
IS=1A,VGS=0V  
1
3
A
DYNAMIC PARAMETERS  
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
1040  
180  
110  
0.7  
pF  
pF  
pF  
VGS=0V, VDS=15V, f=1MHz  
VGS=0V, VDS=0V, f=1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Gate resistance  
2
SWITCHING PARAMETERS  
Qg(10V)  
Total Gate Charge  
19.2  
9.36  
2.6  
4.2  
5.2  
4.4  
17.3  
3.3  
24  
12  
nC  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
Qg(4.5V)  
Qgs  
Qgd  
tD(on)  
tr  
Total Gate Charge  
Gate Source Charge  
Gate Drain Charge  
Turn-On DelayTime  
V
GS=10V, VDS=15V, ID=8.5A  
Turn-On Rise Time  
VGS=10V, VDS=15V, RL=1.8,  
GEN=3Ω  
R
tD(off)  
tf  
Turn-Off DelayTime  
Turn-Off Fall Time  
trr  
Qrr  
IF=8.5A, dI/dt=100A/µs  
IF=8.5A, dI/dt=100A/µs  
16.7  
6.7  
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
ns  
nC  
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in  
any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.  
B: Repetitive rating, pulse width limited by junction temperature.  
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.  
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.  
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve  
provides a single pulse rating.  
Rev 5 : August 2005  
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL  
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING  
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,  
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.  
Alpha & Omega Semiconductor, Ltd.