AO4817
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
-V
GS
(Volts)
6
4
2
0
0
5
10
15
20
25
30
35
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
2500
V
DS
=-15V
I
D
=-8A
Capacitance (pF)
2000
1500
1000
C
oss
500
0
0
5
10
15
20
25
30
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
rss
C
iss
100.0
R
DS(ON)
limited
100µs
1ms
10ms
0.1s
1.0
T
J(Max)
=150°C
T
A
=25°C
0.1
0.1
1
-V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
100
1s
10s
DC
Power (W)
10µs
40
T
J(Max)
=150°C
T
A
=25°C
-I
D
(Amps)
10.0
30
20
10
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
P
D
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
0.1
T
on
0.01
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
100
1000
T
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
