AO4815
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
3000
V
DS
=-15V
I
D
=-8A
Capacitance (pF)
2500
2000
1500
C
oss
1000
500
0
0
5
20
25
30
35
40
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
10
15
45
0
15
20
25
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
10
30
C
rss
C
iss
8
-V
GS
(Volts)
6
4
2
0
100.0
R
DS(ON)
limited
40
100µs
1ms
10ms
0.1s
Power (W)
10µs
30
T
J(Max)
=150°C
T
A
=25°C
10.0
-I
D
(Amps)
20
1.0
T
J(Max)
=150°C
T
A
=25°C
0.1
0.1
1s
10s
DC
1
100
10
0
0.001
0.01
0.1
1
10
100
1000
10
-V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
P
D
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
0.1
T
on
Single Pulse
0.01
0.00001
0.0001
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
0.001
0.01
100
1000
T
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
