AO4812
30V Dual N-Channel MOSFET
General Description
The AO4812 uses advanced trench technology to provide
excellent R
DS(ON)
and low gate charge. The two MOSFETs
make a compact and efficient switch and synchronous
rectifier combination for use in buck converters.
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=4.5V)
30V
6A
< 30mΩ
< 42mΩ
100% UIS Tested
100% R
g
Tested
SOIC-8
Top View
Bottom View
Top View
S2
G2
S1
G1
D2
D2
D1
D1
D1
D2
G1
S1
G2
S2
Pin1
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
C
Maximum
30
±20
6
5
30
10
5
2
1.3
-55 to 150
Units
V
V
A
A
mJ
W
°
C
V
GS
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
AS
, I
AR
E
AS
, E
AR
P
D
T
J
, T
STG
Avalanche energy L=0.1mH
T
A
=25°
C
Power Dissipation
B
T
A
=70°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
48
74
32
Max
62.5
90
40
Units
°
C/W
°
C/W
°
C/W
Rev 9: February 2011
www.aosmd.com
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AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
