AO4806
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
10V
2.5V
30
4.5V
2V
20
16
12
20
I
D
(A)
8
10
V
GS
=1.5V
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
40
V
GS
=1.8V
Normalized On-Resistance
1.6
V
GS
=2.5V,6A
1.4
V
GS
=4.5V, 8A
4
0
0
0.5
1
1.5
2
2.5
3
V
GS(Volts)
Figure 2: Transfer Characteristics
125°C
25°C
V
DS
=5V
I
D
(A)
R
DS(ON)
(m
Ω
)
30
20
V
GS
=2.5V
V
GS
=4.5V
1.2
V
GS
=1.8V, 4A
V
GS
=10V, 9.4A
10
V
GS
=10V
0
0
5
10
15
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
40
1
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+01
1.0E+00
30
R
DS(ON)
(m
Ω
)
I
D
=6A
1.0E-01
I
S
(A)
125°C
20
125°C
1.0E-02
1.0E-03
1.0E-04
25°C
10
25°C
0
0
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
