AO4801
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4801 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications. It may be used in a
common drain arrangement to form a bidirectional blocking
switch. Standard Product AO4801 is Pb-free (meets ROHS &
Sony 259 specifications). AO4801L is a Green Product
ordering option. AO4801 and AO4801L are electrically
identical.
VDS (V) = -30V
ID = -5 A (VGS = -10V)
RDS(ON) < 49mΩ (VGS = -10V)
RDS(ON) < 64mΩ (VGS = -4.5V)
RDS(ON) < 120mΩ (VGS = -2.5V)
D2
D1
S1
1
2
3
4
8
7
6
5
S2
G2
S1
G1
D2
D2
D1
D1
G2
G1
SOIC-8
S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current A
-30
±12
V
V
VGS
TA=25°C
TA=70°C
-5
ID
-4.2
A
Pulsed Drain Current B
IDM
-30
TA=25°C
TA=70°C
2
PD
W
Power Dissipation A
1.44
-55 to 150
TJ, TSTG
Junction and Storage Temperature Range
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
48
74
Max
62.5
110
40
Units
°C/W
°C/W
°C/W
t ≤ 10s
Steady-State
Steady-State
RθJA
RθJL
35
Alpha & Omega Semiconductor, Ltd.
AOS [ ALPHA & OMEGA SEMICONDUCTORS ]
