AO4800B/L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
30
20
10
0
20
16
12
8
10V
VDS=5V
4.5V
3V
125°C
2.5V
25°C
4
VGS=2V
0
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
VDS (Volts)
VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
60
50
40
30
20
10
1.7
1.5
1.3
1.1
0.9
0.7
0.5
VGS=4.5V
VGS=2.5V
VGS=10V
VGS=2.5V
VGS=4.5V
VGS=10V
VGS=2.5V
VGS=4.5
VGS=10V
0
5
10
15
20
-50 -25
0
25 50 75 100 125 150 175
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
100
90
80
70
60
50
40
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
125°C
ID=6.9A
125°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
25°C
1.0E-04
COMPONENTS IN2L5I°FCE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
30
1.0E-05
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
20
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
1.0E-06
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
VSD (Volts)
VGS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com