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AO4805 参数 Datasheet PDF下载

AO4805图片预览
型号: AO4805
PDF下载: 下载PDF文件 查看货源
内容描述: 双P沟道增强型场效应晶体管 [Dual P-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 6 页 / 206 K
品牌: AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
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AO4805
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Conditions
I
D
=-250µA, V
GS
=0V
V
DS
=-24V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
=±25V
V
DS
=V
GS
I
D
=-250µA
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-8A
Static Drain-Source On-Resistance
T
J
=125°C
V
GS
=-20V, I
D
=-8A
V
GS
=-4.5V, I
D
=-5A
V
DS
=-5V, I
D
=-8A
-1.7
40
16
20.5
15
16
33
21
-0.75
-1
-2.6
19
25
18
-2.5
Min
-30
-1
-5
±100
-3
Typ
Max
Units
V
µA
nA
V
A
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
nC
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
I
S
=-1A,V
GS
=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
g
Gate resistance
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Gate Source Charge
Q
gd
Gate Drain Charge
t
D(on)
Turn-On DelayTime
t
r
Turn-On Rise Time
t
D(off)
Turn-Off DelayTime
t
f
Turn-Off Fall Time
t
rr
Body Diode Reverse Recovery Time
Q
rr
V
GS
=0V, V
DS
=-15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
2076
503
302
2
39
8
11.4
12.7
7
25.2
12
32
26
V
GS
=-10V, V
DS
=-15V, I
D
=-8A
V
GS
=-10V, V
DS
=-15V, R
L
=1.8Ω,
R
GEN
=3Ω
I
F
=-8A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge I
F
=-8A, dI/dt=100A/µs
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
µs
pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
SOA curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.