AO4805
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
-10V
-6V
60
-4.5V
60
-5V
80
V
DS
=-5V
-I
D
(A)
40
-4V
20
V
GS
=-3.5V
0
0
1
2
3
4
5
-I
D
(A)
40
125°
C
20
25°
C
0
1
3
5
V
GS
(Volts)
4
Figure 2: Transfer Characteristics (Note E)
2
6
-V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
20
Normalized On-Resistance
1.6
R
DS(ON)
(m
Ω
)
15
1.4
V
GS
=-10V
V
GS
=-10V
I
D
=-8A
1.2
V
GS
=-20V
I
D
=-9A
10
V
GS
=-20V
1
17
5
2
10
5
0
9
12
15
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
3
6
0.8
0
25
50
75
100
125
150
175
Temperature (°
C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
35
I
D
=-9A
30
25
R
DS(ON)
(m
Ω
)
I
S
(A)
125°
C
20
25°
C
15
10
5
2
4
6
8
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
1.0E+01
1.0E+00
40
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
125°
C
25°
C
Rev 7: December 2010
www.aosmd.com
Page 3 of 5
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
