AO4801
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4801 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications. It may be used in a
common drain arrangement to form a bidirectional blocking
switch.
Standard Product AO4801 is Pb-free (meets ROHS &
Sony 259 specifications). AO4801L is a Green Product
ordering option. AO4801 and AO4801L are electrically
identical.
Features
V
DS
(V) = -30V
I
D
= -5 A (V
GS
= -10V)
R
DS(ON)
< 49mΩ (V
GS
= -10V)
R
DS(ON)
< 64mΩ (V
GS
= -4.5V)
R
DS(ON)
< 120mΩ (V
GS
= -2.5V)
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
G1
D1
D2
SOIC-8
G2
S1
S2
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
A
B
Maximum
-30
±12
-5
-4.2
-30
2
1.44
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
C
Maximum Junction-to-Lead
Symbol
A
A
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
48
74
35
Max
62.5
110
40
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
