AO4801A
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4801A uses advanced trench technology to
provide excellent R
DS(ON)
with low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO4801A is Pb-free
(meets ROHS & Sony 259 specifications)
Features
V
DS
(V) = -30V
I
D
=-5.6A (V
GS
= 10V)
R
DS(ON)
< 42mΩ (V
GS
= 10V)
R
DS(ON)
< 52mΩ (V
GS
= 4.5V)
R
DS(ON)
< 75mΩ (V
GS
= 2.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
SOIC-8
Top View
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
D1
D2
G1
S1
G2
S2
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
10 Sec
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
AF
Pulsed Drain Current
Avalanche Current
B
B
B
Steady State
Units
V
-30
±12
4.2
3.4
-30
11
18
T
A
=25°C
T
A
=70°C
I
DSM
I
DM
I
AR
E
AR
P
DSM
T
J
, T
STG
T
A
=25°C
5.6
4.5
A
Repetitive avalanche energy L=0.3mH
Power Dissipation
T
A
=70°C
mJ
1.1
0.7
W
°C
2.0
1.3
-55 to 150
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
A
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
48
74
35
Max
62.5
110
40
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
