AO4800B
30V
Dual N-Channel MOSFET
General Description
The AO4800B uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The two
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in buck
converters.
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
= 4.5V)
R
DS(ON)
(at V
GS
= 2.5V)
30V
6.9A
< 27mΩ
< 32mΩ
< 50mΩ
100% UIS Tested
100% R
g
Tested
SOIC-8
Top View
Bottom View
S2
G2
S1
G1
Top View
D1
D1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
G1
S1
G2
S2
Pin1
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
C
Maximum
30
±12
6.9
5.8
30
14
10
2
1.3
-55 to 150
Units
V
V
A
A
mJ
W
°
C
V
GS
T
A
=25°
C
C
T
A
=70°
I
D
I
DM
I
AS
, I
AR
E
AS
, E
AR
P
D
T
J
, T
STG
Avalanche energy L=0.1mH
T
A
=25°
C
Power Dissipation
B
T
A
=70°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
48
74
32
Max
62.5
90
40
Units
°
C/W
°
C/W
°
C/W
Rev 4: Dec 2011
www.aosmd.com
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