SRFET
AO4724
N-Channel Enhancement Mode Field Effect Transistor
TM
General Description
SRFET
TM
The AO4724 uses advanced trench
technology with a monolithically integrated Schottky
diode to provide excellent R
DS(ON)
,and low gate charge.
This device is suitable for use as a low side FET in
SMPS, load switching and general purpose
applications. Standard product
AO4724 is Pb-free
(meets ROHS & Sony 259 specifications).
Features
V
DS
(V) = 30V
(V
GS
= 10V)
I
D
= 10.5A
R
DS(ON)
< 17.5mΩ (V
GS
= 10V)
R
DS(ON)
< 29 mΩ (V
GS
= 4.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
D
SOIC-8
S
S
S
G
D
D
D
D
G
S
SRFET
Soft Recovery
MOSFET:
Integrated Schottky Diode
TM
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
AF
Current
Pulsed Drain Current
Power Dissipation
Avalanche Current
B
B
Symbol
V
DS
V
GS
Maximum
10 Sec
Steady State
30
±20
10.5
7.7
6.2
80
3.1
2.0
13
25
-55 to 150
1.7
1.1
8.5
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
B
I
D
I
DM
P
D
I
AR
E
AR
T
J
, T
STG
W
A
mJ
°C
Repetitive avalanche energy 0.3mH
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
AF
A
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
31
59
16
Max
40
75
24
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
