AO4718
30V N-Channel MOSFET
SRFET
General Description
SRFET
The AO4718 uses advanced trench
technology with a monolithically integrated
Schottky diode to provide excellent R
DS(ON)
,and
low gate charge. This device is suitable for use
as a low side FET in SMPS, load switching and
general purpose applications.
TM
TM
Features
V
DS
(V) = 30V
I
D
=15A (V
GS
= 10V)
R
DS(ON)
< 9mΩ (V
GS
= 10V)
R
DS(ON)
< 14mΩ (V
GS
= 4.5V)
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D
D
D
D
Bottom View
D
SRFET
Soft Recovery
MOSFET:
Integrated Schottky Diode
G
S
S
S
S
G
TM
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
AF
Pulsed Drain Current
Avalanche Current
B
Avalanche energy L=0.3mH
T
A
=25°
C
Power Dissipation
T
A
=70°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
A
Maximum
Units
V
30
±20
15
12
80
25
94
3.1
2.0
-55 to 150
V
GS
T
A
=25°
C
T
A
=70°
C
B
I
DSM
I
DM
I
AS
, I
AR
A
B
E
AS
, E
AR
P
D
T
J
, T
STG
mJ
W
°
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
32
60
17
Max
40
75
24
Units
°
C/W
°
C/W
°
C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
