AO4716
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
1.0E-02
VDS=24V
I
R
(A)
1.0E-03
1.0E-04
1.0E-05
1.0E-06
0
100
150
200
Temperature (°C)
Figure 12: Diode Reverse Leakage Current vs.
Junction Temperature
8
di/dt=800A/us
125ºC
7
25ºC
Irm (A)
trr (ns)
Qrr
125ºC
6
20
15
10
5
125ºC
4
0
5
10
15
20
25
30
Is (A)
Figure 14: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
60
125ºC
50
40
Q
rr
(nC)
30
20
10
0
0
Irm
200
400
600
800
Qrr
Is=20A
25ºC
125ºC
25ºC
8
7
6
Irm (A)
5
4
3
2
1
0
1000
trr (ns)
35
30
25
20
15
10
5
0
0
200
400
600
800
0
1000
125ºC
25ºC
25ºC
trr
S
1
125ºC
Is=20A
0
0
5
10
15
20
25
30
Is (A)
Figure 15: Diode Reverse Recovery Time and Soft
Coefficient vs. Conduction Current
trr
25
di/dt=800A/us
125ºC
50
V
SD
(V)
VDS=12V
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
100
150
200
Temperature (°C)
Figure 13: Diode Forward voltage vs. Junction
Temperature
3
2.5
2
25ºC
1.5
S
25ºC
1
0.5
0
50
I
S
=1A
5A
20A
10A
70
60
50
Q
rr
(nC)
40
30
20
10
0
Irm
25ºC
5
3
2
S
di/dt (A)
Figure 16: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
di/dt (A)
Figure 17: Diode Reverse Recovery Time and Soft
Coefficient vs. di/dt
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
S
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
