AO4714
30V N-Channel MOSFET
SRFET
General Description
SRFET
TM
AO4714 uses advanced trench technology
with a monolithically integrated Schottky diode to
provide excellent R
DS(ON)
,and low gate charge. This
device is suitable for use as a low side FET in SMPS,
load switching and general purpose applications.
TM
Product Summary
V
DS
(V) = 30V
I
D
=20A (V
GS
= 10V)
R
DS(ON)
< 4.7mΩ (V
GS
= 10V)
R
DS(ON)
< 6.7mΩ (V
GS
= 4.5V)
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D
D
D
D
Bottom View
D
SRFET
Soft Recovery
MOSFET:
Integrated Schottky Diode
G
S
S
S
G
S
TM
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
F
Current
Pulsed Drain Current
B
T
A
=25°
C
Power Dissipation
F
B
Maximum
30
±20
20
16
100
3.0
2.0
30
135
-55 to 150
Units
V
V
A
A
W
A
mJ
°
C
Max
41
75
24
Units
°
C/W
°
C/W
°
C/W
V
GS
T
A
=25°
C
T
A
=70°
C
I
DSM
I
DM
T
A
=70°
C
P
DSM
I
AR
E
AR
Avalanche Current
Repetitive avalanche energy L=0.3mH
B
Junction and Storage Temperature Range
T
J
, T
STG
Thermal Characteristics
Parameter
t
≤
10s
Maximum Junction-to-Ambient
A
A
Steady-State
Maximum Junction-to-Ambient
Steady-State
Maximum Junction-to-Lead
C
Symbol
R
θJA
R
θJL
Typ
31
59
16
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
