AO4710
30V N-Channel MOSFET
SRFET
General Description
SRFET
The AO4710 uses advanced trench
technology with a monolithically integrated Schottky
diode to provide excellent R
DS(ON)
, and low gate
charge. This device is suitable for use as a low side
FET in SMPS, load switching and general purpose
applications.
TM
TM
Product Summary
V
DS
(V) = 30V
I
D
=12.7A (V
GS
= 10V)
R
DS(ON)
< 11.8mΩ (V
GS
= 10V)
R
DS(ON)
< 14.2mΩ (V
GS
= 4.5V)
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D
D
D
D
Bottom View
D
SRFET
TM
Soft Recovery
MOSFET:
Integrated Schottky Diode
G
S
S
S
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
AF
Current
Pulsed Drain Current
Avalanche Current
C
Repetitive avalanche energy L=0.3mH
C
T
A
=25°
Power Dissipation
T
A
=70°
C
C
B
Maximum
30
±12
12.7
10
60
22
73
3.1
2.0
-55 to 150
Units
V
V
A
A
A
mJ
W
°
C
V
GS
T
A
=25°
C
T
A
=70°
C
I
DSM
I
DM
I
AR
E
AR
P
DSM
T
J
, T
STG
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
32
60
17
Max
40
75
24
Units
°
C/W
°
C/W
°
C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
