AO4704
N-Channel Enhancement Mode Field Effect Transistor with
Schottky Diode
General Description
The AO4704 uses advanced trench technology to
provide excellent R
DS(ON)
, shoot-through immunity and
body diode characteristics.This device is suitable for
use as a synchronous switch in PWM applications.
The co-packaged Schottky Diode boosts efficiency
further.
AO4704 is Pb-free (meets ROHS & Sony
259 specifications). AO4704L is a Green Product
ordering option. AO4704 and AO4704L are
electrically identical.
Features
V
DS
(V) = 30V
I
D
= 13 A (V
GS
= 10V)
R
DS(ON)
< 11.5mΩ (V
GS
= 10V)
R
DS(ON)
< 13mΩ (V
GS
= 4.5V)
SCHOTTKY
VDS (V) = 30V, IF = 3A, VF<0.5V@1A
SOIC-8
S/A
S/A
S/A
G
1
2
3
4
8
7
6
5
D/K
D/K
D/K
D/K
D
K
G
S
A
Absolute Maximum Ratings T =25°C unless otherwise noted
A
Symbol
Parameter
MOSFET
V
DS
Drain-Source Voltage
30
V
GS
Gate-Source Voltage
±12
T
A
=25°C
13
I
D
Continuous Drain Current
A
T
A
=70°C
10.4
I
DM
Pulsed Drain Current
B
40
V
KA
Schottky reverse voltage
Continuous Forward Current
A
Pulsed Diode Forward Current
B
Power Dissipation
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
F
I
FM
P
D
T
J
, T
STG
3.1
2
-55 to 150
Schottky
Units
V
V
A
30
4.4
3.2
30
3.1
2
-55 to 150
V
A
W
°C
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
