SRFET
AO4708
N-Channel Enhancement Mode Field Effect Transistor
TM
General Description
SRFET
TM
AO4708 uses advanced trench technology
with a monolithically integrated Schottky diode to
provide excellent R
DS(ON)
,and low gate charge. This
device is suitable for use as a low side FET in SMPS,
load switching and general purpose applications.
Standard
Product AO4708 is Pb-free (meets ROHS
& Sony 259 specifications). AO4708L is a Green
Product ordering option. AO4708L and AO4708 are
electrically identical.
D
S
S
S
G
D
D
D
D
Features
V
DS
(V) = 30V
I
D
=15A (V
GS
= 10V)
R
DS(ON)
< 8.7mΩ (V
GS
= 10V)
R
DS(ON)
< 10.5mΩ (V
GS
= 4.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
G
S
SRFET
TM
Soft Recovery
MOSFET:
Integrated Schottky Diode
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Symbol
Parameter
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
Avalanche Current
B
Repetitive avalanche energy L=0.3mH
T
A
=25°C
Power Dissipation
A
B
Maximum
30
±12
15
12
80
25
94
3.1
2.0
-55 to 150
Units
V
V
A
A
A
mJ
W
°C
T
A
=25°C
T
A
=70°C
I
DSM
I
DM
I
AR
E
AR
P
DSM
T
J
, T
STG
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
Symbol
A
A
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
32
60
17
Max
40
75
24
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
