AO4705
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
The AO4705 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. A
Schottky diode is provided to facilitate the
implementation of non-synchronous DC-DC
converters.
Standard Product AO4705 is Pb-free
(meets ROHS & Sony 259 specifications). AO4705L
is a Green Product ordering option. AO4705 and
AO4705L are electrically identical.
A
S
S
G
1
2
3
4
8
7
6
5
D/K
D/K
D/K
D/K
G
S
A
Features
V
DS
(V) = -30V
I
D
= -10A (V
GS
= -10V)
R
DS(ON)
< 14mΩ (V
GS
= -20V)
R
DS(ON)
< 16mΩ (V
GS
= -10V)
SCHOTTKY
V
DS
(V) = 30V, I
F
= 5A, V
F
<0.52V@3A
D
K
SOIC-8
Absolute Maximum Ratings T =25°C unless otherwise noted
A
Parameter
Symbol
V
DS
Drain-Source Voltage
Gate-Source Voltage
T
A
=25°C
Continuous Drain Current
Pulsed Drain Current
B
A
MOSFET
-30
±25
-10
-8
-60
Schottky
Units
V
V
A
V
GS
T
A
=70°C
I
D
I
DM
V
KA
T
A
=25°C
A
Schottky reverse voltage
Continuous Forward Current
Pulsed Forward Current
B
T
A
=25°C
Power Dissipation
Junction and Storage Temperature Range
Parameter: Thermal Characteristics MOSFET
t
≤
10s
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
C
A
T
A
=70°C
I
F
I
FM
30
5
3.5
3
2
-55 to 150
Typ
28
54
21
36
67
25
30
3
2
-55 to 150
Max
40
75
30
40
75
30
V
A
T
A
=70°C
P
D
T
J
, T
STG
Symbol
R
θJA
R
θJL
R
θJA
R
θJL
W
°C
Units
°C/W
Steady-State
Steady-State
t
≤
10s
Steady-State
Steady-State
Maximum Junction-to-Lead
Thermal Characteristics Schottky
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
A
Maximum Junction-to-Ambient
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
