AO4624
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4624/L uses advanced trench
technology MOSFETs to provide excellent
R
DS(ON)
and low gate charge. The
complementary MOSFETs may be used to
form a level shifted high side switch, and for a
host of other applications. AO4624 and
AO4624L are electrically identical.
-RoHS Compliant
-AO4624L is Halogen Free
Features
n-channel
V
DS
(V) = 30V
I
D
= 6.9A (V
GS
=10V)
R
DS(ON)
< 28mΩ (V
GS
=10V)
< 42mΩ (V
GS
=4.5V)
p-channel
-30V
-6A (V
GS
=-10V)
R
DS(ON)
< 35mΩ (V
GS
= -10V)
< 58mΩ (V
GS
= -4.5V)
100% UIS Tested!
100% Rg Tested!
SOIC-8
D2
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
G2
G1
S2
D1
SOIC-8
Top View
Bottom View
S1
n-channel
p-channel
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
V
DS
30
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
T
A
=25°C
Power Dissipation
Avalanche Current
B
Repetitive avalanche energy 0.1mH
B
Max p-channel
-30
±20
-6
-5
-30
2
1.44
20
20
-55 to 150
Units
V
V
A
V
GS
T
A
=25°C
T
A
=70°C
I
D
I
DM
T
A
=70°C
P
D
I
AR
E
AR
T
J
, T
STG
±20
6.9
5.8
30
2
1.44
15
11
-55 to 150
W
A
mJ
°C
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel
Parameter
t ≤ 10s
Maximum Junction-to-Ambient
A
A
Steady-State
Maximum Junction-to-Ambient
Steady-State
Maximum Junction-to-Lead
C
A
t ≤ 10s
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
Maximum Junction-to-Lead
Symbol
R
θJA
R
θJL
R
θJA
R
θJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ
48
74
35
48
74
35
Max
62.5
110
40
Units
°C/W
°C/W
°C/W
62.5 °C/W
110 °C/W
40 °C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
