AO4620
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4620 uses advanced trench
technology MOSFETs to provide excellent
R
DS(ON)
and low gate charge. The
complementary MOSFETs may be used in
inverter and other applications.
Standard
Product AO4620 is Pb-free (meets ROHS
& Sony 259 specifications).
Features
n-channel
V
DS
(V) = 30V
I
D
= 7.2A (V
GS
=10V)
R
DS(ON)
< 24mΩ (V
GS
=10V)
< 36mΩ (V
GS
=4.5V)
p-channel
-30V
-5.3A (V
GS
= -10V)
R
DS(ON)
< 38mΩ (V
GS
= -10V)
< 60mΩ (V
GS
= -4.5V)
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
G2
D2
D1
SOIC-8
S2
G1
S1
n-channel
p-channel
Max p-channel
-30
±20
-5.3
-4.5
-30
2
1.44
17
43
-55 to 150
Units
V
V
A
Absolute Maximum Ratings T =25°C unless otherwise noted
A
Parameter
Max n-channel
Symbol
V
DS
Drain-Source Voltage
30
V
GS
Gate-Source Voltage
±20
Continuous Drain
7.2
T
A
=25°C
F
Current
T
A
=70°C
6.2
I
D
B
Pulsed Drain Current
I
DM
30
Power Dissipation
T
A
=70°C
B
Avalanche Current
B
Repetitive avalanche energy 0.3mH
Junction and Storage Temperature Range
F
T
A
=25°C
P
D
I
AR
E
AR
T
J
, T
STG
2
1.44
13
25
-55 to 150
W
A
mJ
°C
Thermal Characteristics: n-channel and p-channel
Parameter
A
t
≤
10s
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
Maximum Junction-to-Lead
A
t
≤
10s
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
Maximum Junction-to-Lead
Symbol
R
θJA
R
θJL
R
θJA
R
θJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ
50
80
32
50
80
32
Max
62.5
100
40
62.5
100
40
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
