AO4620
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4620 uses advanced trench technology
MOSFETs to provide excellent R
DS(ON)
and low gate
charge. The complementary MOSFETs may be used
in inverter and other applications.
Features
n-channel
V
DS
(V) = 30V
I
D
= 7.2A (V
GS
=10V)
R
DS(ON)
< 24mΩ (V
GS
=10V)
< 36mΩ (V
GS
=4.5V)
100% UIS tested
100% Rg tested
p-channel
-30V
-5.3A (V
GS
= -10V)
R
DS(ON)
< 32mΩ (V
GS
= -10V)
< 55mΩ (V
GS
= -4.5V)
SOIC-8
Top View
Bottom View
Top View
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
G2
S2
Pin1
G1
S1
D2
D1
n-channel
Max p-channel
-30
±20
-5.3
-4.5
-40
2
1.44
17
43
-55 to 150
p-channel
Units
V
V
A
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Max n-channel
Drain-Source Voltage
V
DS
30
Gate-Source Voltage
Continuous Drain
Current
F
Pulsed Drain Current
Power Dissipation
Avalanche Current
F
B
B
B
V
GS
T
A
=25°
C
T
A
=70°
C
T
A
=25°
C
C
T
A
=70°
I
D
I
DM
P
D
I
AR
E
AR
T
J
, T
STG
±20
7.2
6.2
64
2
1.44
9
12
-55 to 150
W
A
mJ
°
C
Repetitive avalanche energy 0.3mH
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel
Parameter
t
≤
10s
Maximum Junction-to-Ambient
A
A
Steady-State
Maximum Junction-to-Ambient
Steady-State
Maximum Junction-to-Lead
C
A
t
≤
10s
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
Maximum Junction-to-Lead
Symbol
R
θJA
R
θJL
R
θJA
R
θJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ
50
80
32
50
80
32
Max
62.5
100
40
62.5
100
40
Units
°
C/W
°
C/W
°
C/W
°
C/W
°
C/W
°
C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
