AO4616
P-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
-10V
25
-4V
20
-I
D
(A)
-I
D
(A)
15
10
5
0
0
1
2
3
4
5
-V
DS
(Volts)
Fig 16: On-Region Characteristics
40
35
30
25
V
GS
=-10V
20
15
10
0
5
10
15
20
25
-I
D
(A)
Figure 18: On-Resistance vs. Drain Current and
Gate Voltage
60
I
D
=-7.1A
1.0E+01
1.0E+00
1.0E-01
R
DS(ON)
(m
Ω
)
125°C
125°C
30
1.0E-04
20
25°C
1.0E-05
1.0E-06
3
4
5
6
7
8
9
10
0.0
0.2
0.4
0.6
0.8
1.0
-V
SD
(Volts)
Figure 21: Body-Diode Characteristics
25°C
-I
S
(A)
40
1.0E-02
1.0E-03
Normalized On-Resistance
V
GS
=-4.5V
1.60
I
D
=-7.1A
1.40
V
GS
=-10V
-3.5V
V
GS
=-3V
20
15
10
5
0
1
1.5
2
2.5
3
3.5
4
4.5
5
-V
GS
(Volts)
Figure 17: Transfer Characteristics
125°C
25°C
-5V
25
30
V
DS
=-5V
R
DS(ON)
(m
Ω
)
1.20
V
GS
=-4.5V
I
D
=-5.6A
1.00
0.80
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 19: On-Resistance vs. Junction
Temperature
50
10
-V
GS
(Volts)
Figure 20: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.