AO4610
N-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
I
D
(A)
15
10
5
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
28
Normalized On-Resistance
26
24
R
DS(ON)
(m
Ω
)
22
20
18
16
14
0
5
10
15
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
1.0E+01
1.0E+00
40
R
DS(ON)
(m
Ω
)
I
D
=8.5A
I
S
(A)
1.0E-01
125°C
1.0E-02
25°C
1.0E-03
20
25°C
1.0E-04
1.0E-05
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
V
GS
=10V
V
GS
=4.5V
1.6
V
GS
=10V
1.4
I
D
=8.5A
V
GS
=4.5V
1.2
4V
10V
4.5V
3.5V
12
I
D
(A)
125°C
8
V
GS
=3V
4
0
1.5
2
2.5
3
3.5
4
V
GS
(Volts)
Figure 2: Transfer Characteristics
25°C
20
16
V
DS
=5V
1
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
30
125°C
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
