AO4614B
P-Channel Electrical Characteristics (T =25°C unless otherwise noted)
J
Symbol
Parameter
Conditions
I
D
= -250µA, V
GS
=0V
V
DS
= -40V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
= ±20V
V
DS
=V
GS
I
D
= -250µA
V
GS
= -10V, V
DS
= -5V
V
GS
= -10V, I
D
= -5A
R
DS(ON)
g
FS
V
SD
I
S
Static Drain-Source On-Resistance
V
GS
= -4.5V, I
D
= -4A
Forward Transconductance
V
DS
= -5V, I
D
= -5A
Diode Forward Voltage
I
S
= -1A,V
GS
=0V
Maximum Body-Diode Continuous Current
T
J
=125°C
-1.7
-30
36
52
50
13
-0.76
-1
-2
940
V
GS
=0V, V
DS
= -20V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
97
72
14
17
V
GS
= -10V, V
DS
= -20V,
I
D
= -5A
7.9
3.4
3.2
6.2
V
GS
= -10V, V
DS
= -20V, R
L
=4Ω,
R
GEN
=3Ω
I
F
= -5A, dI/dt=100A/µs
8.4
44.8
41.2
21
14
27
22
10
1175
45
65
63
S
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
mΩ
-2
Min
-40
-1
-5
±100
-3
Typ
Max
Units
V
µA
nA
V
A
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
(-10V) Total Gate Charge
Q
g
(-4.5V) Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
= -5A, dI/dt=100A/µs
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with
2
A: The value of R
θJA
is in any given application depends onon 1in FR-4 board board design. Thein a still air environmenton the
A
=25°C. The
T
A
=25°C. The value measured with the device mounted the user's specific with 2oz. Copper, current rating is based with T
value in any a given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance
t
≤
10s thermal resistance rating.
rating.
B: Repetitive rating, pulse width limited by junction temperature.
9
B: Repetitive is the sum of width limitedimpedence from junction to lead R and lead to ambient.
C. The R
θJA
rating, pulse the thermal by junction temperature.
θJL
12
C. The R
θJA
ischaracteristics in Figures 1 to 6,12,14 are obtained usingR
θJL
and lead to ambient. 0.5% max.
D. The static the sum of the thermal impedence from junction to lead <300
µs
pulses, duty cycle
2
D. The static characteristics in with the 1 to 6,12,14 are obtainedFR-4 board with 2oz. Copper, in a still air environment with
E. These tests are performed Figures device mounted on 1 in using 80
µs
pulses, duty cycle 0.5% max.
2
E.
A
=25°C. The are performed with the single pulse rating. 1 in FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
T These tests SOA curve provides a device mounted on
SOA curve provides a single pulse rating.
Rev0 : Sept 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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