AO4614B
40V Dual P + N-Channel MOSFET
General Description
The AO4614B uses advanced trench technology
MOSFETs to provide excellent R
DS(ON)
and low gate
charge. The complementary MOSFETs may be used
in H-bridge, Inverters and other applications.
Product Summary
N-Channel
V
DS
(V) = 40V,
I
D
= 6A (V
GS
=10V)
R
DS(ON)
< 30mΩ (V
GS
=10V)
< 38mΩ (V
GS
=4.5V)
100% UIS Tested
100% Rg Tested
P-Channel
-40V
-5A (VGS=-10V)
< 45mΩ (VGS= -10V)
< 63mΩ (VGS= -4.5V)
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
Bottom View
Top View
S2
G2
S1
G1
Pin1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
D2
D1
G2
S2
G1
S1
n-channel
p-channel
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
V
DS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Avalanche Current
B
Repetitive avalanche energy L=0.1mH
Power Dissipation
T
A
=25°
C
C
T
A
=70°
B
B
Max n-channel
40
±20
6
5
30
14
9.8
2
1.28
-55 to 150
Max p-channel
-40
±20
-5
-4
-30
-20
20
2
1.28
-55 to 150
Units
V
V
V
GS
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
STG
A
mJ
W
°
C
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel
Parameter
t
≤
10s
Maximum Junction-to-Ambient
A
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
Maximum Junction-to-Lead
A
t
≤
10s
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
Maximum Junction-to-Lead
Symbol
R
θJA
R
θJL
R
θJA
R
θJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ
48
74
35
48
74
35
Max
62.5
110
50
62.5
110
50
Units
°
C/W
°
C/W
°
C/W
°
C/W
°
C/W
°
C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
