AO4614A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
30
25
20
-I
D
(A)
15
15
-3.5V
10
5
0
0
1
2
3
4
5
-V
DS
(Volts)
Figure 1: On-Region Characteristics
V
GS
=-3V
-I
D
(A)
10
5
0
1
1.5
2
2.5
3
3.5
4
4.5
5
-V
GS
(Volts)
Figure 2: Transfer Characteristics
1.8
Normalized On-Resistance
V
GS
=-4.5V
1.6
1.4
1.2
1
0.8
30
0
2
4
6
8
10
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
160
140
120
R
DS(ON)
(m
Ω
)
-I
S
(A)
100
80
60
40
20
2
3
4
5
6
7
8
9
10
1.0E-06
0.0
0.2
0.4
0.6
0.8
1.0
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
25°C
125°C
1.0E-02
1.0E-03
1.0E-04
1.0E-05
25°C
I
D
=-5A
1.0E+01
1.0E+00
1.0E-01
125°C
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
V
GS
=-4.5V
I
D
=-2A
V
GS
=-10V
I
D
=-5A
-10V
-5V
-6V
-4.5V
-4V
25
V
DS
=-5V
20
125°C
25°C
60
55
50
45
40
35
V
GS
=-10V
Alpha & Omega Semiconductor, Ltd.
R
DS(ON)
(m
Ω
)
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
