AO4613
P-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
-10V
25
20
-I
D
(A)
15
10
V
GS
=-3V
5
-2.5V
0
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
90
Normalized On-Resistance
80
70
R
DS(ON)
(m
Ω
)
60
50
40
30
20
0
5
10
15
20
25
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
100
90
80
70
R
DS(ON)
(m
Ω
)
60
125°C
50
40
30
20
10
3
4
5
6
7
8
9
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
25°C
-I
S
(A)
1.0E-01
125°C
1.0E-02
1.0E-03
1.0E-04
25°C
1.0E-05
1.0E-06
0.0
0.2
0.4
0.6
0.8
1.0
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
D
=-6.1A
1.0E+01
1.0E+00
V
GS
=-10V
V
GS
=-4.5V
1.6
V
GS
=-10V
I
D
=-6.1A
V
GS
=-4.5V
I
D
=-4
0
0
1
2
3
4
5
6
-V
GS
(Volts)
Figure 2: Transfer Characteristics
5
125°C
25°C
-6V
-5V
-4V
-4.5V
20
25
V
DS
=-5V
15
-3.5V
-I
D
(A)
10
1.4
1.2
1
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Alpha & Omega Semiconductor, Ltd.