AO4612
60V Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4612 uses advanced trench technology
MOSFETs to provide excellent R
DS(ON)
and low gate
charge. The complementary MOSFETs may be
used in H-bridge, Inverters and other applications.
Features
n-channel
V
DS
(V) = 60V
I
D
= 4.5A (V
GS
=10V)
R
DS(ON)
< 56mΩ (V
GS
=10V)
< 77mΩ (V
GS
=4.5V)
p-channel
-60V
-3.2A (V
GS
= -10V)
R
DS(ON)
< 105mΩ (V
GS
= -10V)
< 135mΩ (V
GS
= -4.5V)
100% Rg tested
SOIC-8
Top View
Bottom View
S2
G2
S1
G1
D2
D2
D1
D1
D2
D1
1
2
3
4
8
7
6
5
G2
S2
G1
S1
SOIC-8
Pin1
n-channel
p-channel
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Symbol
Parameter
Max n-channel
V
DS
Drain-Source Voltage
60
V
GS
Gate-Source Voltage
±20
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
B
Max p-channel
-60
±20
-3.2
-2.6
-20
2
1.28
-55 to 150
Max
62.5
90
40
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
4.5
3.6
20
2
1.28
-55 to 150
Typ
48
74
35
W
°C
Units
°C/W
°C/W
°C/W
T
J
, T
STG
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel
Parameter
Symbol
A
t
≤
10s
Maximum Junction-to-Ambient
R
θJA
A
Steady-State
Maximum Junction-to-Ambient
R
θJL
Steady-State
Maximum Junction-to-Lead
C
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
