AO4610
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
10
125°C
Capacitance (pF)
250
f = 1MHz
1
I
F
(Amps)
200
150
100
50
0
0
15
20
25
30
V
KA
(Volts)
Figure 13: Schottky Capacitance Characteristics
5
10
0.1
0.01
25°C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
F
(Volts)
Figure 12: Schottky Forward Characteristics
0.7
Leakage Current (mA)
0.6
0.5
0.4
0.3
0.2
0.1
0
25
50
75
100
125
Temperature (°C)
150
175
I
F
=1A
I
F
=3A
100
10
1
0.1
0.01
0.001
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 15: Schottky Leakage current vs. Junction
Temperature
V
F
(Volts)
V
R
=30V
Figure 14: Schottky Forward Drop vs.
Junction Temperature
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
Single Pulse
T
10
100
1000
0.01
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
Figure 15: Schottky Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
