AO4607
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4607 uses advanced trench
technology MOSFETs to provide excellen
R
DS(ON)
and low gate charge. The
complementary MOSFETs may be used
in inverter and other applications. A
Schottky diode is co-packaged with the n-
channel FET to minimize body diode
losses.
AO4607 is Pb-free (meets ROHS
& Sony 259 specifications). AO4607L is
a Green Product ordering option.
AO4607 and AO4607L are electrically
identical.
S2/A
G2
S1
G1
1
2
3
4
8
7
6
5
D2/K
D2/K
D1
D1
Features
n-channel
V
DS
(V) = 30V
I
D
= 6.9A (V
GS
=10V)
R
DS(ON)
< 28mΩ (V
GS
=10V)
< 42mΩ (V
GS
=4.5V)
p-channel
-30V
-6A (V
GS
=1-0V)
R
DS(ON)
< 35mΩ (V
GS
=
-10V)
< 58mΩ (V
GS
=- 4.5V)
SCHOTTKY
VDS (V) = 30V, IF = 3A, VF<0.5V@1A
D
K
A
S2
D
G
G
SOIC-8
S
n-channel
p-channel
Max p-channel
-30
±20
-6
-5
-30
2
1.28
-55 to 150
Units
V
V
A
W
°C
Units
V
A
W
°C
Absolute Maximum Ratings T =25°C unless otherwise noted
A
Parameter
Max n-channel
Symbol
V
DS
Drain-Source Voltage
30
V
GS
Gate-Source Voltage
±20
Continuous Drain
6.9
T
A
=25°C
A
Current
T
A
=70°C
5.8
I
D
B
Pulsed Drain Current
I
DM
30
T
A
=25°C
T
A
=70°C
Power Dissipation
Junction and Storage Temperature Range
Parameter
Reverse Voltage
Continuous Forward T
A
=25°C
A
Current
T
A
=70°C
Pulsed Diode Forward Current
B
Power Dissipation
A
P
D
T
J
, T
STG
Symbol
V
DS
I
D
I
DM
P
D
T
J
, T
STG
2
1.28
-55 to 150
Maximum Schottky
30
3
2
20
2
1.28
-55 to 150
T
A
=25°C
T
A
=70°C
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
