AO4606
30V Complementary MOSFET
General Description
The AO4606 uses advanced trench technology
MOSFETs to provide excellent R
DS(ON)
and low gate
charge. The complementary MOSFETs may be used to
form a level shifted high side switch, and for a host of
other applications.
Product Summary
N-Channel
V
DS
= 30V
I
D
= 6A (V
GS
=10V)
R
DS(ON)
< 30m
< 42m
(V
GS
=10V)
(V
GS
=4.5V)
P-Channel
-30V
-6.5A (V
GS
=-10V)
R
DS(ON)
< 28m
< 44m
(VGS=-10V)
(VGS=-4.5V)
100% UIS Tested
100% R
g
Tested
100% UIS Tested
100% R
g
Tested
SOIC-8
D2
Top View
Bottom View
Top View
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
D1
G2
S2
G1
S1
Pin1
n-channel
p-channel
Units
V
V
A
A
mJ
W
°
C
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Max n-channel
V
DS
Drain-Source Voltage
30
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
C
Max p-channel
-30
±20
-6.5
-5.3
-30
23
26
2
1.3
V
GS
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
AS
, I
AR
E
AS
, E
AR
P
D
T
J
, T
STG
±20
6
5
30
10
5
2
1.3
-55 to 150
Avalanche energy L=0.1mH
T
A
=25°
C
Power Dissipation
B
T
A
=70°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
48
74
32
Max
62.5
90
40
Units
°
C/W
°
C/W
°
C/W
Rev 10: April 2012
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