AO4600
p-channel MOSFET Electrical Characteristics (T =25°C unless otherwise noted)
J
Parameter
Symbol
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Conditions
I
D
=-250µA, V
GS
=0V
V
DS
=-24V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
=±12V
V
DS
=V
GS
I
D
=-250µA
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-10V, I
D
=-5A
T
J
=125°C
54
7
80
11
-0.75
-0.7
-25
42.5
49
74
64
120
-1
-3
952
103
77
5.9
9.5
2
3.1
12
4
37
12
21
13
1200
-1
Min
-30
-1
-5
±100
-1.4
Typ
Max
Units
V
µA
nA
V
A
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
26
ns
nC
g
FS
V
SD
I
S
V
GS
=-4.5V, I
D
=-4A
V
GS
=-2.5V, I
D
=-1A
Forward Transconductance
V
DS
=-5V, I
D
=-5A
Diode Forward Voltage
I
S
=-1A,V
GS
=0V
Maximum Body-Diode Continuous Current
Static Drain-Source On-Resistance
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
g
Gate resistance
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Gate Source Charge
Q
gd
Gate Drain Charge
t
D(on)
Turn-On DelayTime
t
r
t
D(off)
t
f
t
rr
Q
rr
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=0V, V
DS
=-15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
30
12
V
GS
=-4.5V, V
DS
=-15V, I
D
=-5A
V
GS
=-10V, V
DS
=-15V, R
L
=3Ω,
R
GEN
=6Ω
I
F
=-5A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-5A, dI/dt=100A/µs
2
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value
A: The value of R
θJA
is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
in any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance rating.
value in any rating, application limited by junction temperature.
B: Repetitivea given pulse width depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance
rating.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
B: Repetitive rating, pulse width limited by junction temperature.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
µs
pulses, duty cycle 0.5% max.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
µs
pulses, duty cycle 0.5% max.
curve provides a single pulse rating.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Rev 4 : Sept 2005
SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
