AO4576
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
10V
80
5V
7V
60
I
D
(A)
I
D
(A)
4V
60
4.5V
80
100
V
DS
=5V
40
40
125°C
25°C
20
V
GS
=3V
20
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
10
8
R
DS(ON)
(mΩ)
Ω
6
4
2
0
0
5
10
15
20
25
30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Normalized On-Resistance
V
GS
=4.5V
0
0
1
2
3
4
5
6
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
1.6
V
GS
=10V
I
D
=20A
1.4
1.2
V
GS
=10V
1
V
GS
=4.5V
I
D
=20A
0.8
0
25
50
75
100
125
150
175
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
14
12
10
R
DS(ON)
(mΩ)
Ω
I
S
(A)
8
6
4
2
0
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
25°C
125°C
I
D
=20A
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
Rev1: Nov. 2012
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AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
